Tetraphenyldibenzoperiflanthene (DBP) attracts interest as an organic electron donor for photovoltaic applications. In order to assist in the analysis of vibrational and optical spectra measured during the formation of thin films of DBP, we have studied the vibrational modes and the electronic states of this molecule. Information on the vibrational modes of the electronic ground state has been obtained by IR absorption spectroscopy of DBP grains embedded in polyethylene and CsI pellets and by calculations using density functional theory (DFT). Electronic transitions have been measured by UV/vis absorption spectroscopy applied to DBP molecules isolated in rare-gas matrices. These measurements are compared with the results of ab initio and semi-empirical calculations. Particularly, the vibrational pattern observed in the S1 ← S0 transition is interpreted using a theoretical vibronic spectrum computed with an ab initio model. The results of the previous experiments and calculations are employed to analyze the data obtained by high-resolution electron energy loss spectroscopy (HREELS) applied to DBP molecules deposited on a Au(111) surface. They are also used to examine the measurements performed by differential reflectance spectroscopy (DRS) on DBP molecules deposited on a muscovite mica(0001) surface. It is concluded that the DBP molecules in the first monolayer do not show any obvious degree of chemisorption on mica(0001). Regarding the first monolayer of DBP on Au(111), the HREELS data are consistent with a face-on anchoring and the absence of strong electronic coupling.

The adsorption of hydrogen at nonpolar GaN(1100) surfaces and its impact on the electronic and vibrational properties is investigated using surface electron spectroscopy in combination with density functional theory (DFT) calculations. For the surface mediated dissociation of H2 and the subsequent adsorption of H, an energy barrier of 0.55 eV has to be overcome. The calculated kinetic surface phase diagram indicates that the reaction is kinetically hindered at low pressures and low temperatures. At higher temperatures ab-initio thermodynamics show, that the H-free surface is energetically favored. To validate these theoretical predictions experiments at room temperature and under ultrahigh vacuum conditions were performed. They reveal that molecular hydrogen does not dissociatively adsorb at the GaN(1100) surface. Only activated atomic hydrogen atoms attach to the surface. At temperatures above 820 K, the attached hydrogen gets desorbed. The adsorbed hydrogen atoms saturate the dangling bonds of the gallium and nitrogen surface atoms and result in an inversion of the Ga-N surface dimer buckling. The signatures of the Ga-H and N-H vibrational modes on the H-covered surface have experimentally been identified and are in good agreement with the DFT calculations of the surface phonon modes. Both theory and experiment show that H adsorption results in a removal of occupied and unoccupied intragap electron states of the clean GaN(1100) surface and a reduction of the surface upward band bending by 0.4 eV. The latter mechanism largely reduces surface electron depletion.

No abstract