Summary
In this study, we followed a facile method to grow well‐aligned PANI nanostructures on S‐doped reduced graphene oxide nanosheets (SPANI/S‐rGO) using hydrothermal method combined with soft template polymerization of aniline where naphthalene sulfonic acid is used as a dopant for PANI as well as the soft template. The effect of using different wt% of S‐rGO on the structural, morphology, and electrochemical performance of SPANI/S‐rGO composites has been evaluated. Supercapacitor fabricated using SPANI/S‐rGO10 (10 wt% of S‐rGO) composite based electrodes delivered a high specific capacitance of 347.5 F/g at a current density of 1 A/g in symmetrical cell design (the specific capacitance was calculated based on a single electrode). Only 11% of its initial capacitance is lost after 2500 cycles at a current density of 2 A/g. The enhanced performance is attributed to the optimum loading of S‐rGO in designing binary composite, well‐aligned growth of SPANI nanostructures on S‐rGO sheets, and synergistic effect of both S‐rGO and SPANI. The facile synthesized SPANI/S‐rGO composite electrode material with the aforementioned features is considered to be a promising candidate for a high‐performance supercapacitor.
In our current study, we have investigated the effect of potassium doping on AC conductivity and the dielectric properties of tin selenide (SnSe). Potassiumdoped SnSe (K x Sn 1-x Se with x = 0-20 mol%) polycrystals were synthesized via hydrothermal method. The phase of the synthesized samples was confirmed to be single phase with orthorhombic structure as obtained by X-ray diffraction. The average crystallite size for all the K x Sn 1-x Se samples was calculated using the Debye-Scherrer formula and they were found to be decreased as potassium (K) concentration increased. Scanning electron microscope revealed plate-like morphology for all K x Sn 1-x Se samples. Transmission electron microscope studies at high resolution showed plate-like morphology which is connected with small nanorods for the K 0.20 Sn 0.80 Se. Optical studies were carried out using UV-Vis-NIR diffuse reflectance spectroscopy. The bandgap values were found to be decreased as K concentration is increased. Temperature-dependent dielectric studies were studied for all K x Sn 1-x Se samples. Correlated barrier hopping is responsible for the transport of charge carriers in the conduction mechanism. Electrical modulus studies reveal a non-Debye-type dielectric relaxation phenomenon. The results of dielectric studies specify the application of K-doped SnSe in frequency related and capacitive storage devices.
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