We present in this paper an electrical study centred on NPN heterojunction bipolar transistors (HBTs), realized in an industrial BiCMOS SiGe:C process, featuring high attractive performances (f t > 200 GHz) in terms of microwave behaviour and low-frequency noise; reaching this level of performance with good dc characteristics could be however a difficult challenge. Electrical modelling is investigated, using our 2D simulator, based on the drift-diffusion model (DDM). The simulations were very efficient for optimizing the devices. The dc and ac results obtained in this work are efficiently compared with electrical characteristics coming from measurements and SPICE-like parameter extractions, from simulations via a compact model (HICUM) implemented in the so-called commercial simulator ADS (advanced design system). This work was a first step for designing RF circuits like oscillators in a simple way.
This paper addresses phase noise analysis of a radiofrequency LC oscillator built around a SiGe heterojunction bipolar transistor (HBT) realized in a 0.35 m BiCMOS process, as an active device. First, we give a brief background to SiGe HBT device physics. The key point is to initiate quantitative analysis on the influence of defects induced during extrinsic base implantation on electric performances of this device. These defects are responsible for the current fluctuations at the origin of low frequency noise in BiCMOS technologies. Next, we investigate the effect of implantation defects as a source of noise in semiconductors on the phase noise of a radiofrequency LC oscillator. We observe their influence on the oscillator phase noise, and we quantify the influence of their energy distribution in the semiconductor gap. Second, we give a behavioral model of an LC oscillator containing a SiGe HBT as an active device. The key goal is to study the susceptibility of a radiofrequency oscillator built around a SiGe HBT to phase noise disturbance sources. Based on the time variance behavior of phase noise in oscillators, transient simulations (in the time domain) were used to analyze the time-dependent noise sensitivity of the oscillator.
SUMMARYThe first step of this work is to study the susceptibility of a radiofrequency oscillator to deterministic disturbance sources.A Colpitts oscillator, working around a 4 GHz frequency, contains a heterojunction bipolar transistor with a silicon-germanium base as an active device. A mixed-mode analysis is involved, applying a microscopic drift diffusion model to the device, whereas the rest of the circuit used is governed by Kirchhoff's laws.We assume that this tool is very relevant to grasp the influence of intrinsic or extrinsic noisy sources of the oscillator. Our first simulation raw results motivate us to discuss, and perhaps extend, via some analytical models, the so-called impulse sensitivity function model.In this paper, we try to develop quantitative predictions about the phase noise of such oscillators, and to give some new tracks on this field.
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This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations were designed. Comprehensive mixed-mode simulations were performed to evaluate the SET susceptibility of considered LNA cascode configurations, and we have analyzed how the strike parameters affect their output response. In this fact the strike position, linear energy transfer (LET), and track radius, were varied, and the resulting transients were compared for the different LNA configurations. Through this study, the potential capability of the inverse mode SiGe heterojunction bipolar transistor (HBT) in LNA radiation tolerance was confirmed for various strike operating conditions. It has been demonstrated that the single event sensitivity was reduced for LNA employing inverse mode SiGe HBT for strike device. The strike influence on the different LNA configurations response depends on strike LET, where a reduced SET variation is observed for high LET.
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