Origin of the continental-scale Tan-Lu fault zone (TLFZ), East China, remains controversial. About 550 km sinistral offset of the Dabie orogenic belt (DOB) and Sulu orogenic belt (SOB) is shown along the NE-NNEstriking TLFZ. Syn-collisional, sinistral ductile shear belts in the TLFZ have been identified. Thirteen phengite bulk separates from the mylonites were dated by the 40 Ar/ 39 Ar method. They gave cooling ages of the 198-181 Ma for the shear belts along the eastern margin of the DOB and 221-210 Ma from the western margin of the SOB. Distribution of the foreland basin deposits suggests that sinistral offset of the DOB and SOB by the TLFZ took place prior to deposition of the Upper Triassic strata. The marginal structures around the DOB and SOB support syn-collisional faulting, and indicate anticlockwise rotation of the DOB during the displacement. The folding and thrust faulting related to crustal subduction, coeval with the TanLu faulting, is older than the foreland basin deposition related to the orogenic exhumation. Several lines of evidence demonstrate that the TLFZ was developed as a syncollisional transform fault during latest Middle to earliest Late Triassic time when the DOB and SOB experienced crustal subduction of the South China Block (SCB). Eastward increase of the crustal subduction rates is believed to be responsible for the sinistral transform faulting.

Highly ordered large‐area arrays of wurtzite CdS nanowires are synthesized on Cd‐foil substrates via a simple liquid reaction route using thiosemicarbazide and Cd foil as the starting materials. The CdS nanowires are single crystals growing along the [001] direction and are perpendicular to the surface of the substrate. The characteristic Raman peaks of CdS are red‐shifted and show asymmetric broadening, which is ascribed to phonon confinement effects arising from the nanoscale dimensions of the nanowires. Significantly, the uniform CdS nanowire arrays can act as laser cavities in the visible‐light range, leading to bandgap lasing at ca. 515 nm with obvious modes. The high density of nuclei and the preferential growth direction induce the formation of aligned CdS nanowires on the metal substrate.