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SiO2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O2 gas of 30 L · min−1, while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet.magnified image

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Time-variable pulsed dielectric barrier discharges in open air have been investigated to calculate the reduced electric field at breakdown using a simple electrical circuit. In this calculation, charges accumulated on the dielectric surface before discharge breakdown, were integrated to measure gap voltage and reduced electric field. Experimental result showed that in the case of pulse discharge, the gap voltage at pulsed breakdown experimentally showed a Paschen curve with decreasing gap distance. The simulation result obtained using the Boltzmann equation solver shows that the electron energy distribution changed with gap voltage and reduced electric field. We also conclude that pulse rise time plays an important role in determining reduced electric field, and finally electron energy.

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation