In this paper, we propose a multistage transimpedance amplifier (TIA) based on the local negative feedback technique. Compared with the conventional global-feedback technique, the proposed TIA has the advantages of a wider bandwidth, and lower power dissipation. The schematic and characteristics of the proposed TIA circuit are described. Moreover, the proposed TIA employs inductive peaking to increase bandwidth. The TIA is implemented using a 65 nm complementary metal oxide semiconductor (CMOS) technology and consumes 23.9 mW with a supply voltage of 1.0 V. Using a back-annotated simulation, we obtained the following characteristics: a gain of 46 dBΩ and −3 dB frequency of 11.4 GHz. TIA occupies an area of 366 μm × 225 μm.
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