We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-Cut™ method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis showed many defects were introduced near the bottom interface and it cannot be recovered by annealing. We suggest alternative ways to avoid defects for n-GOI fabrication.
Structural properties of the strained Ge channels formed on SiGe (111) and SiGe (100) relaxed buffer layers are investigated. Compressive strained Ge(111) channels are grown on reverse graded Si 0.26 Ge 0.74 buffer layers, and as a result, very low rms roughness of 1.7 nm and large compressive strain of −0.92% are obtained. The phosphorous doping is attempted in the SiGe buffer for the purpose of suppression of parallel conduction and very abrupt doping is realized without very little diffusion. The high-quality, doping controlled and largely strained Ge(111) channel/SiGe(111) buffer heterostructure is a promising template for high-performance Ge(111) based devices.
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