We report on fabrication and characterization of SnO 2 -Si n-n made by deposition of SnO 2 film onto monocrystalline silicon substrate by rapid photothermal oxidation (RPO) of Sn with condition 500 • C/120 s. The film has been characterized by techniques such as XRD, optical transmission, and Hall effect. The XRD spectrum showed that the grown SnO 2 was polycrystalline in nature with tetragonal crystal structure. From optical transmittance data the band gap of SnO 2 film was calculated and found to be 3.9 eV. The electrical measurement revealed that the SnO 2 film was n-type. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of SnO 2 -Si heterojunction were investigated. The ideality factor of junction estimated from I-V characteristics was 1.8 at 300 K. The spectral responsivity of heterojunction having two peaks of response located at 650 nm and 850 nm.
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