The phase diagram for the Bi2Te3–Sb2Te3 pseudo-binary system is of the solid-solution type, where the distribution coefficient k is equal to unity at 33.3 and 66.7 mole % Sb2Te3. The c lat tice parameter remains essentially constant across the diagram at 30.49 Å for both slowly crystallized and quenched alloys. For quenched alloys the a lattice parameter decreases almost linearly, from a value of 4.487 Å, for pure Bi2Te3, to a value of 4.275 Å, for pure Sb2Te3; however, a significant contraction from linear variation is found in slowly crystallized materials. EG diminishes in an essentially linear fashion from 0.16 eV, for pure Bi2Te3, to 0.12 eV at 24.2 mole % Sb2Te3 in both slowly crystallized and quenched materials. EG remains approximately constant from 24.2 to 66.7 mole % Sb2Te3 for slowly crystallized materials but continues to drop for quenched materials.
The effects of extended Co60 γ radiation upon the electrical resistivity, Hall coefficient, and magneto-resistance of Bi2Te3 have been examined. Co60 γ radiation causes an increase in the Hall coefficient in n-type Bi2Te3 and a decrease in p type. For γ-ray exposures in the range of 1018 photons cm−2, the apparent carrier removal rate is ∼10−1 carriers per Co60 photon. Thermal annealing of radiation-induced damage was also investigated. The results may be most consistently analyzed in terms of a model which consists of radiation-induced tellurium vacancies and interlaminar clusters of Te interstitials. The effects of the radiation-induced point defects are discussed. Evidence of an effect on impurity band conduction at low temperatures in n-type Bi2Te3 is observed.
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