Some porous silicon, which were formed on n-type c-Si under illumination during the anodization,show blue photoluminescence after a long period of storage in an atmospheric environment at room temperature. Experiments of photoluminescence and infrared transmission and reflection indicate that samples, which were anodized under strong Ar+ 488 nm laser illumination, have an oxidation layer of better quality, in which there are less stress, less amorphous and a more completely cross-linked Si-O-Si network. And this kind of oxidation is favorable to the blue emission of porous silicon.
A novel characteristic of the junction current drift effect in the Cu/porous silicon (Cu/PS) device prepared by electrodeposition in which Cu ions were deposited on porous silicon is reported. The junction current increases with time and gradually approaches to a saturated value when a certain forward bias is applied on the Cu/PS device. Moreover, after the bias was withdrawn for a period, a different drift process was observed when the same bias was applied again. The drifttime constant and the initial current of latter drift process depend on cut-off time. Such an effect is explained in terms of the model that only part of electrons from porous silicon contributes to the junction current while other electrons are captured by the traps in the interface between Cu and porous silicon in the Cu/PS device.* Supported by the National Natural Science Foundation of China under Grant No. 59372108.@by the Chinese physical societyNo. 2 WANG Guan-zhong et al.
The I-V curves of the initial stage of porous silicon formation have been measured, and the amount of charge transfer for silicon atoms adsorbed different elements has been calculated. It was pointed out that there would exist a dipole layer at c-Si/electrolyte interface, which affected the formation and properties of porous silicon. The effects of HF concentration, current density and light illumination on material formation were also discussed.
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