High-performance rectifying contacts with a rectifying ratio exceeding 1000 are obtained by depositing thin transparent and conducting CdO films on porous silicon (PSi) and annealing at an optimized temperature. The reverse current of 1.5 mm diameter diodes at −10 V in the dark is 26 nA; this increases by three orders of magnitude under exposure to normal tungsten lamp illumination. The results show that CdO-on-PSi diodes will act as very good candidates for making high-efficiency photodiodes.
The electrochemical reduction of 4-nitrosodiphenylamine, 3-methyl-4-amino-5-nitrosouracil and 1,3-dimethyl-4-amino-5-nitrosouracil was studied in connection with the development of methods of electrosynthesis of some amino derivatives, intermediate compounds in the production of medicinal preparations and antioxidants of polymeric materials.
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