InAs1−xSbx films have been successfully grown by molecular-beam epitaxy on (100) GaAs substrates. Long wavelength photoluminescence spectra have been obtained reproducibly in the 3–5 and 8–12 μm spectral ranges in III-V compound semiconductors.
We have successfully grown InAs1−xSbx by molecular beam epitaxy over the complete compositional range of 0<x<1 on InAs substrates. The band gaps have been measured using optical absorption and cut-off wavelengths as long as 12.5 μm have been obtained.
Photorefiectance is used to measure AlxGa 1 _ xAs composition, and to determine carrier concentrations in Si-doped AIGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AIGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AiGaAs band edges precisely. A similar broad signal from modulation~deped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.