The LO and TO phonon frequencies and dampings have been measured by near-infrared Raman spectroscopy both in bulk GaAs and InP. The phonon damping of the LO pliorion in InP is much smaller than the LO phonon damping in GaAs. The experimentally obtained temperature dependences were compared with a theory including cubic anharmonic processes and the thermal expansion of the lattice. It is shown that the phonon damping is mainly affectcd by decay processes into acoustic phonons.
Mittels Ranianspektroskopie im nalien IR-Bereicli wurden die LOund TO-Phononcnfrequcnzcn und-dampfungcIi in GaAs und InP gemessen. Die Diimpfmg des LO-Phonons in InP ist vie1 kleiner als die Darnpfung des LO-Phonons in GaAs. Die experirrientell brstinirriteri Temperaturabhangigkeiten werden rnit einer Theorie, die anharmonische Prozesse und die thcrmisch bedingte Gitterausdehnung berucksichtigt, verglichen. Es wird gezeigt, dafi die Phononendainpfung im wesentlichen dmch Zerfallsprozesse in akustische Phononen beeinflufit wird.
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