An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS. © 1995 American Institute of Physics.This letter presents Schottky barrier based estimates of band alignments among tetrahedrally bonded semiconductors with lattice constant values in the range from C to ZnSe. This range includes the refractory semiconductors, e.g., GaN and related nitride compounds, of much current interest due to recent successes in short-wavelength light-emitting devices. 1 The band alignments are determined empirically from Au Schottky barrier height data in a manner similar to that found in Refs. 2 and 3. Basis for the connection between band alignments and Schottky barrier height data can be found in Ref. 4. For our study, we use primarily the limited Schottky barrier data currently available, which nonetheless appear sufficient to indicate some striking differences between small and large lattice-parameter semiconductors. These Schottkybased band edge energies are compared to the predictions of Harrison and Tersoff. 5 Based on our findings for valence band offsets of wide-gap semiconductors, three applications, each involving heterostructures of p-type GaN with wide-gap II-VI semiconductors, are proposed as a means of circumventing limitations in p-type dopability or electrical contact formation in the latter materials.The band alignments are summarized in Fig.
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