To cite this article: V. E. Loginov , A. V. Tumarkin , M. V. Sysa , O. U. Buslov , M. M. Gaidukov , A. I. Ivanov & A. B. Kozyrev (2001) The influence of synthesis temperature on structure properties of SrTiO 3 ferroelectric films,The results of structure investigations of SrTi03 films depending on synthesis temperature are presented and electrical characteristics of 4-electrode planar capacitors based on prepared films are investigated. Finally, the technological conditions of high structure quality SrTi03 films preparation are determined. SrTiO3 films prepared under these conditions possess electrical characteristics sufficient for room temperature MW applications in a wide frequency range.
The influence of film thickness on electrophysical properties of planar varactors based on ion-plasma deposited BaSrTiO 3 films is investigated. Planar capacitors with copper electrodes were used for tunability and loss factor investigation. Microwave parameters of varactors based on BaSrTiO 3 films were measured at (1 ÷ 8) GHz frequency range and (170 ÷ 370) K temperature range. The tunability and loss factor was found to be strongly depended on film thickness. The optimal thickness of BaSrTiO 3 film from high tunability and low loss factor point of view was estimated as 1 µm approximately. Dielectric losses at frequency range (1 ÷ 8) GHz (tan δ ∼ 0,01 at 1 GHz, tanδ ∼ 0,014 at 8 GHz and zero bias) and high tunability (Cmax/Cmin ∼ 2) at room temperature were observed.
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