tk technique is described whereby an adherent plate of nickel may be deposited on silicon for use as an electrical contact.ABSTRACT Dense oxide films have been formed anodically on p-and n-type singlecrystal Si in connection with the electrical properties of Si surfaces. Concentrated HNO~ or H~PO~ permit forming, but the highest voltage obtainable is less than 200 v. A solution of KNO~ in N-methylacetamide permits forming to 560 v, and is also preferable in other respects.The field during forming is of the order 2.6 • 10 ~ v/cm corresponding to a thickness increment of about 3.8A/v. The ratio has been found as well from interference colors and direct weighing, as by capacitance measurements.

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An electrochemical technique has been developed for polishing germanium and silicon to yield smooth and flat semiconductor surfaces. This technique is based on the anodic dissolution of a semiconductor whose surface is close to a moving cathode. The average surface roughness of electropolished semiconductors was found to be • and the deviation from flatness was typically 1 Mcm.For n-type samples, the holes necessary to support uniform electrolysis of the surface were injected by illuminating the anode surface. For both n-and p-type anodes the average current efficiencies were found to be between 103 and 105%. Practical current densities are about 0.1 amp/cm 2. At this value, the etch rates were about 2.2 #/rain for germanium and 1.9 ~/min for silicon.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-04-03 to IP

The object of this study was to screen a group of metal oxides as possible candidates for use as semitransparent mask materials. For this study, all masks were prepared by d‐c reactive sputtering onto glass. The uv‐visible spectra for the entire group of oxide films were recorded. The spectral characteristics desired for a photomask are (i) transmission of less than 1% in the region below 404 nm (for masking), and (ii) transmission of greater than 30% at 589 nm (for the see‐through characteristic). Because of inferior spectral absorption properties, the following systems were eliminated from further consideration: lead oxide‐silicon oxide, lead oxide‐germanium oxide, copper oxide, copper oxide‐vanadium oxide, molybdenum oxide, chromium oxide, uranium oxide, mercury oxide, and zinc oxide. Those systems which satisfied the spectral requirements were: iron oxide, vanadium oxide, nickel oxide, iron oxide‐nickel oxide, and iron oxide‐vanadium oxide. These materials were then further evaluated to assure etchability in solvents compatible with photoresist processsing and resistance to abrasion. These latter two properties will be discussed in greater detail in a forthcoming article. Considering only sputtered films, the 10 m/o (mole per cent) iron oxide‐90 m/o vanadium oxide is the most promising material based on these additional requirements.

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