Synchronized oscillators are ubiquitous in nature, and synchronization plays a key part in various classical and quantum phenomena. Several experiments have shown that in thin superconducting films, disorder enforces the droplet-like electronic texture--superconducting islands immersed into a normal matrix--and that tuning disorder drives the system from superconducting to insulating behaviour. In the vicinity of the transition, a distinct state forms: a Cooper-pair insulator, with thermally activated conductivity. It results from synchronization of the phase of the superconducting order parameter at the islands across the whole system. Here we show that at a certain finite temperature, a Cooper--air insulator undergoes a transition to a superinsulating state with infinite resistance. We present experimental evidence of this transition in titanium nitride films and show that the superinsulating state is dual to the superconducting state: it is destroyed by a sufficiently strong critical magnetic field, and breaks down at some critical voltage that is analogous to the critical current in superconductors.
We study transport properties of graphene-based p-n junctions irradiated by an electromagnetic field (EF). The resonant interaction of propagating quasiparticles with external monochromatic radiation opens dynamical gaps in their spectrum, resulting in a strong modification of currentvoltage characteristics of the junctions. The values of the gaps are proportional to the amplitude of EF. We find that the transmission of the quasiparticles in the junctions is determined by the tunneling through the gaps, and can be fully suppressed when applying a sufficiently large radiation power. However, EF can also generate current, but not only suppress it. We demonstrate that if the height of the potential barrier exceeds a half of the photon energy, the directed current (photocurrent) flows through the junction without any dc bias voltage applied. Such a photocurrent arises as a result of inelastic quasiparticle tunneling assisted by one-or two-photon absorption. We calculate current-voltage characteristics of diverse graphene-based junctions and estimate their parameters necessary for the experimental observation of the photocurrent and transmission suppression.
Graphene-based materials have been suggested for applications ranging from nanoelectronics to nanobiotechnology. However, the realization of graphene-based technologies will require large quantities of free-standing two-dimensional (2D) carbon materials with tunable physical and chemical properties. Bottom-up approaches via molecular self-assembly have great potential to fulfill this demand. Here, we report on the fabrication and characterization of graphene made by electron-radiation induced cross-linking of aromatic self-assembled monolayers (SAMs) and their subsequent annealing. In this process, the SAM is converted into a nanocrystalline graphene sheet with well-defined thickness and arbitrary dimensions. Electric transport data demonstrate that this transformation is accompanied by an insulator to metal transition that can be utilized to control electrical properties such as conductivity, electron mobility, and ambipolar electric field effect of the fabricated graphene sheets. The suggested route opens broad prospects toward the engineering of free-standing 2D carbon materials with tunable properties on various solid substrates and on holey substrates as suspended membranes.
Granular aluminum (grAl) is a promising high kinetic inductance material for detectors, amplifiers, and qubits. Here we model the grAl structure, consisting of pure aluminum grains separated by thin aluminum oxide barriers, as a network of Josephson junctions, and we calculate the dispersion relation and nonlinearity (self-Kerr and cross-Kerr coefficients). To experimentally study the electrodynamics of grAl thin films, we measure microwave resonators with open-boundary conditions and test the theoretical predictions in two limits. For low frequencies, we use standard microwave reflection measurements in a low-loss environment. The measured low-frequency modes are in agreement with our dispersion relation model, and we observe self-Kerr coefficients within an order of magnitude from our calculation starting from the grAl microstructure. Using a high-frequency setup, we measure the plasma frequency of the film around 70 GHz, in agreement with the analytical prediction.
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