The paper presents a technique for obtaining the complex μ-methoxy (copper (II), bismuth (III)) acetylacetonate, Cu3Bi(AA)4(OCH3)5, where HAA = H3C-C(O)-CH2-C(O)-CH3, and results of studying the electrical parameters of this substance. The studied material has been established to be a semiconductor. The composition, structure, and physicochemical properties of the synthesized heterometallic -methoxy (copper (II), bismuth (III)) acetylacetonate were verified by elemental, X-ray phase, magnetochemical, IR spectroscopy and thermogravimetric examination. A molar mass and a number of valence electrons in one molecule were calculated for a selected complex compound (AA)4(OCH3)5 (І). The molar mass was equal to 950.5 g/mol, and the number of valence electrons was 229. For experimental studies, a cylindrical sample with a mass of 0.1 g and a volume of 17.67 10 -9 m 3 made of the complex compound (I) by a pressing method was utilized. Investigation of conductive properties of -methoxy (copper (II), bismuth (III)) acetylacetonate in compressed form within the temperature range 50-120 °C showed that the electrical resistivity sharply decreases from 8•10 9 to 7•10 3 Ohm•cm with increasing temperature, which is typical for semiconductor materials. Conductivities of the material were calculated considering the experimental measurements: 1 was equal to 1.25·10 -8 1/(Оhm•m) for 50 °С and 2 was equal to 1.4·10 -2 1/(Оhm•m) for 120 °С. The influence of a magnetic field on the electric field strength inside the test sample of the substance was investigated. The magnetic field induction dependence of the Hall voltage for the sample substance was obtained as well. The operating temperature range is from 50 to 220 °C, with chemical compound decomposing at 260 °C. The charge carrier concentration increases from 7.8•10 17 m -3 at 50 °C to 4.14•10 29 m -3 at 220 °C, while the Hall constant decreases from 9.43 m 3 •C -1 to 1.8•10 -11 m 3 •C -1 , when the temperature increases from 50 to 220 °C. The Hall voltage varies from 1.97•10 -5 to 1.97•10 -3 V in the magnetic field range from 0 to 1000 mT. The new magnetically sensitive element based on a synthesized semiconductor material will be used to develop magnetic field sensors.
The possibilities of using nanocomposite material µ-methoxo (copper (II), bismuth (III)) acetylacetonate (I), the following composition: Cu3Bi(AA)4(OCH3)5, де HAA = H3C–C(O)–CH2–C(O)–CH3, as a magnetoresistive sensitive element, in a frequency transducer of a magnetic field. In order to create a suitable heterometallic complex compound, a method for its synthesis was developed. The structure, composition and physicochemical properties of the synthesized nanocomposite material were confirmed on the basis of elemental, X-ray phase analyzes, magnetochemical, IR spectroscopic and thermogravimetric studies. According to research, the density of the corresponding material 𝜌=5,659⋅103 g/m3, the mass of one molecule 𝑚0 = 157,837⋅10−26 kg, the number of valence electrons 𝑁=1450,715⋅1019, which made it possible to calculate the concentration of charge carriers at a temperature of 323 K: 𝑛=82.1⋅1028 m−3. The study of the electrical properties of µ-methoxo (copper (II), bismuth (III)) acetylacetonate in compressed form in the temperature range 323 - 393 K showed that with increasing temperature, its resistivity drops sharply from 8·107 to 70 Ohm·cm, which is typical for semiconductor materials. Based on these data, the band gap 𝛥𝛦 = 2.18 eV was determined. Calculations have shown that this material is a semiconductor, with current carriers of both signs. The dependence of the concentration of charge carriers on the temperature is obtained. The model of the frequency transducer, on the basis of the autogenerator from bipolar to field-effect transistors is considered. Simulation of this scheme was performed in the program LTspice XVIII. Based on this model, the I – V characteristics of this transducer, the dependence of the current, voltage and frequency of the output signal when changing the resistance of the magnetically sensitive resistor. The graph of dependence of frequency of an output signal on induction of a magnetic field on the basis of which sensitivity of the given transducer is defined is received
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