A method w a s developed f o r the preparation of 2,3-dinitrilo--1,4-dithia-g,lO-anthraquinone labelled with uC or 35S o r 14C+35S on a milligram scale with the use of the semiconductographic detection. The exchange of the 35S radionuclide in various stages of the preparation w a s examined in detail. By the present method, the following activities were obtained: 88 C i of 14C/mol o r 44 C i of 35S/m01 or 1.46 C i of uC + 75 C i of 35S/m01. + Present a d d r e s s : Inspekta, P r a g u e , Czechoslovakia ++ Indonesian visitor, the r e s u l t s partly included in Dipl. Thesis C h a r
<p>Pada penelitian ini telah berhasil disintesis komposit rGO-NS melalui pendopingan pada material berbasis grafena oksida tereduksi (rGO) dengan penambahan amonium thiosianat sebagai sumber dopan N dan S. Dopan N dan S pada rGO mempengaruhi struktur rGO yang ditunjukkan dengan pergeseran puncak difraktogram pada 2θ=24,97 (<em>hkl</em> 002). Spektra <em>Fourier transform infrared</em> (FTIR) material rGO-NS memberikan serapan puncak baru dari vibrasi C=N pada daerah 1501-1516 cm<sup>-1</sup> dan dari vibrasi C-N serta C-S pada daerah 1130 – 1146 cm<sup>-1</sup>. Morfologi rGO-NS berupa lembaran tipis dua Dimensional (2D) bertumpuk dengan jarak antar lapis tertentu. Pengujian <em>I-V measurement </em>menggunakan Keithley 2602A, sistem DSSC dengan material rGO-NS digunakan sebagai bahan elektroda lawan menunjukkan efisiensi terbesar mencapai 0,1268%, dengan peningkatan efisiensi sebanyak 11,32 kali apabila dibandingkan dengan Pt.</p><p><strong>Synthesis of Reduced Graphene Oxide doped with </strong><strong>Nitrogen and Sulfur </strong><strong>from Ammonium Thiocyanate as </strong><strong>a Counter</strong><strong> Electrode in Dye</strong><strong>-</strong><strong>Sensitized Solar Cell (DSSC) System</strong><strong>.</strong> In this research, the rGO-NS composite was successfully synthesized through doping on reduced graphene oxide based-materials (rGO) with the addition of ammonium thiocyanate as nitrogen (N) and sulfur (S) source. N and S dopant influence the rGO structure indicated by the peak shifting into 2θ=24.97 (hkl 002). The Fourier transform infrared (FTIR) spectrum of material rGO-NS reveals new bands which correspond to C=N vibration within 1501 – 1516 cm<sup>-1 </sup>and C–N vibration together with C–S at area between 1130-1146 cm<sup>-1</sup>. The morphology of rGO-NS shows that the material consists of many 2 Dimensional (2D) thin layers. The current and voltage (I-V) measurement using Keithley 2602A with material rGO-NS as a counter electrode on DSSC system, demonstrates that the highest efficiency is 0.1268%. This performance is 11.32 times higher compare to the DSSC system with Pt.</p>
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