With a small signal frequency-modulation of the driving current, the resonance frequency and the damping factor of the optical output power response of blue nitride-based ridge lasers grown on [0001]-plane gallium-nitride substrates were investigated with a network analyzer setup. From the linear dependence of the squared resonance frequency on the driving current, the gain coefficients of the logarithmic gain model could be extracted being 7680 cm−1 for blue nitride-based lasers. For this purpose, additional parameters such as the carrier density and the confinement factor were assigned by carrier lifetime and quantum efficiency measurements and one dimensional transfer matrix simulations, respectively.
We report on the realization of room temperature pulsed operation of GaInN multiple quantum well laser diodes. The devices were grown by organometallic vapor phase epitaxy on SiC substrates. Gain guided laser structures with a 8 mm wide resonator show a threshold current density of 17 kA/cm 2 . For decreasing stripe width the threshold current density increases due to decreasing overlap of electrically pumped area and the lateral extension of the optical wave. The devices were operated at temperatures up to 90 C with characteristic temperatures of 200 and 290 K for emission wavelengths of 418 and 428 nm, respectively.
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