Thin film growth by a non-vacuum deposition technique, namely, the chemical solution
deposition (CSD) method, is reviewed with emphasis on the growth of various oxide
films and their properties. Various aspects of the solution chemistries for the
different routes are discussed, and the effects of solution precursor properties on the
conversion of the as-deposited film to the desired phase are also discussed. Crystal
structures and functional properties common to many oxide materials are briefly
reviewed.
We have grown epitaxial CeO2 buffer layers on biaxially textured Ni–W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni–3 at%W (Ni–W) substrates and heat-treated at 1100 °C in a gas mixture of Ar–4%H2 for 15 min. Detailed x-ray studies indicate that CeO2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8° and 7.5°, respectively. High temperature in situ XRD studies show that the nucleation of CeO2 films starts at 600 °C and the growth completes within 5 min when heated at 1100 °C. SEM and AFM investigations of CeO2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO2 cap layers were deposited on MOD CeO2-buffered Ni–W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, Jc, of about 1.5 MA cm−2 at 77 K and self-field was obtained on YBCO (PLD)/CeO2 (sputtered)/YSZ (sputtered)/CeO2 (spin-coated)/Ni–W.
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