The growth and electrical properties of CuInS2 thin films are described. Two deposition schemes, single- and double-source methods, are reported. Data are presented indicating the effects of film and substrate temperature on the electrical characteristics (mobility, resistivity, and carrier concentration) of the films. Both n- and p-type films are reported, and the effects of sulfur concentrations are discussed. Some postdeposition annealing effects are also detailed.
The vacuum deposition of CuInCe2 thin films is reported. As-deposited films are generally n-type due to selenide deficiencies. The temperature dependence of film mobility, conductivity, and carrier concentration are presented and indicate the dominance of the grain-boundary scattering mechanism. Mobilities of the range 1–20 cm2/V s are reported for as-deposited films. Data are also presented for films annealed in Ar atmospheres. Films annealed in Ar/H2Se can be made p-type with mobilities in the range 1–8 cm2/V s. Electron and x-ray diffraction data are discussed. Grain size data, especially the consideration of the effects of substrate temperature, are included. Photoconductive decay times are reported for the films.
The temperature coefficient of resistance (TCR) of ultrathin (40–120 Å) metal films is investigated. The effects of temperature, island size, interisland separation, and thickness are incorporated into an analytic expression for the TCR based upon an activated tunneling model. Experimental data are presented to verify the relationships. Anomalous effects, including experimental data, are discussed. An analytic treatment of this situation results in the inclusion of an additional negative term in the TCR expression when compared to the activated tunneling case. The possibilities of positive and negative TCR are indicated.
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