Articles you may be interested inControlled monolayer self-assembly process based on the atomic force microscopy nanoscratching method Electrical transport and mechanical properties of alkylsilane self-assembled monolayers on silicon surfaces probed by atomic force microscopy Atmospheric pressure operation of a field emission diode based on self-assembled silicon nanostructuresUnderstanding the electrical transport properties of nanostructures and metal-nanostructure contacts is important before these can be fabricated into electronic devices. Conductive atomic force microscopy investigations of self-assembled silicon nanostructures are reported here, where the nanostructures are fabricated using electron-beam rapid thermal annealing, a self-assembly process that has been shown to produce field-emission devices using CMOS-compatible technology. Unambiguous correlations between current flow and topography are found, and local current-voltage ͑IV͒ spectroscopy measurements are used to determine the ideality factors ͑1.83-3.20͒ and barrier heights ͑0.28-0.49 eV͒ for the metal-nanostructure contacts.
CMOS process compatible in tegrated diodes using self-assembled silicon-nanostructure cathodes have been fabricated and characterized at atmos pheric pressure. The silicon nanostruc tures are atomically sharp and about 10 nm high, self-assembled on a silicon sub strate by electron beam annealing (EBA). The electrical conduction characteristics of the devices show Fowler-Nordheim field emission at high fields. A field en hancement factor, fl, of about 5x10 5 cm-1 and silicon effective work function,
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