AlSb and AlAsxSb1−x epitaxial films grown by metalorganic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500 ° C and 76 Torr using trimethylamine alane and triethylantimony. AlAs0.16Sb0.84 films lattice matched to InAs were grown at 600 ° C and 76 Torr by adding arsine. Secondary ion mass spectroscopy showed C and O levels below 2×1018 and 6×1018 cm−3, respectively, for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn-doped AlAs0.16Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between 1×1017 to 5×1018 cm−3 for Zn-doped material and electron concentrations in the low to mid- 1018 cm−3 for Sn-doped material.

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A pseudomorphic, compressively strained InAs0.94Sb0.06 multiple quantum well injection laser, emitting in the 3.5–3.6 μm range is reported. The device was grown by metalorganic chemical vapor deposition, and x-ray and optical characterization indicate that the active region has a very low dislocation density. In pulsed mode, the laser operated at 135 K and displayed a characteristic temperature of 33 K, equaling the highest value reported for molecular-beam epitaxy grown, InAsSb/InAlAsSb active region lasers of comparable wavelength. Factors limiting the performance of these lasers are discussed.

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Compound semiconductors find extensive application as magnetic position sensors in the automotive environment. Typical applications involve the sensor element, a permanent magnet attached to the sensor, and a moving magnetic circuit -a target wheel. Wider mechanical gaps in the magnetic circuit can be utilized with a sensor of higher sensitivity, and thus high sensitivity is valuable. Further limitations on the choice of materials are imposed by temperature sensitivity, as the automotive environment is characterized by wide temperature operating ranges (-40°C up to 200°C). The magnetic signal may be hidden by the temperature drift in the sensor output, andthus temperature stability limits the sensor's resolution. Automotive position sensors find use in ignition timing and misfire detection (cam and crank sensors), as wheel speed sensors (anti-lock brakes and other types of active wheel-control), in brushless electric motors and several other applications. This work reviews progress achieved to refine the use of InSb for automotive sensing applications.