The structure and properties of GaAs layers grown by molecular-beam epitaxy at low temperature (150-250 °C) have been studied. The samples were found to contain up to 1.5 at.% extra As, which formed nano-scale clusters under annealing. The dependences of the excessive As concentration and As-cluster size and density on the growth and annealing conditions were established. LT-GaAs layers were found to have high electrical resistivity, however, our investigations of microwave absorption in a weak magnetic field revealed a characteristic signal usually attributed to the superconducting phase. It has been proved that this microwave absorption is unlikely to be due to either the arsenic clusters in LT-GaAs films or indium in the substrate, as it was assumed previously. We suggest a new hypothesis that the superconducting phase in LT-GaAs is Ga nanoclusters formed on the growth surface.
The effect of the substrate orientation and the supersaturation on the growth rate and doping level of vapor grown GaAs is considered. Experimental results are discussed in terms of crystal growth theory developed by BURTON, CABRERA, FRANK and CHERNOV (BCFCh). It is shown that the main predictions of theory are in agrocment with the experimental results. A t the same time experimental results, on the whole, are more complicated than predicted by simple crystal growth model. It can be concluded that the BCFCh-theory is applicable for analysing the growth rate and doping lcvel anisotropy for vapor grown crystals. PaccMaTpmnaeTcn BnHmEie opnemasm n o~n o m~u M nepecmueatia Ha CKOPOCTL pocTa M yposem nerMposaHEiH ~B T O~~M T~I~C H~~~H O~O apceHma rannm. &a cTannoB, P~~B M T~H B pa6o~ax IjapToHa, KaBpepa, @pama M YepHosa ( E K Q q ) . 06cymne~m 3I(CIIePMMeHTaJIbHbIX pe3ynbTaTOB IlpPiBJIeKaeTCH TeOPMfl POCTa KPM-nOMi3aH0, YTO OCHOBHbIe 3aKOHOMePHOCTH, BbITeHaIOUIHe 113 PaCCMaTPMBaeMOfi TeOpHM , COrJIaCylOTCH C Ha6nIOAaeMHMEi 3KCIIepMMeHTaJIbH0, XOTII IIOCJIeLWEie HOCTEl IlpHMeHeHMR TeOpIlM B K Q q AJIH aHaJIM3a aHU30TpOIlEiM CKOPOCTM pOCTa M YPOBHR JIerMpOBaHHH KpMCTaJlJlOB, BhIpaUIMBaeMJdX B ra30TpaHCIIOpTHbIX CHCTe-Max. B pane cnyqaeB O K~~H B~I O T C F I 6onee C J I O~H H M I I . AenaeTccI BMBOH o qenecoo6paa-
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