Semiconductor gas sensors with elevated selectivity and sensitivity for sulphur dioxide (SO 2 ), were prepared by mean tin dioxide (SnO 2 ) doped with nickel. The aim of this research is to develop integrated sensors of pollution gas into environment. Nickel doped SnO 2 powders were prepared by Pechini`s method [1] and characterized morphologically by X-ray diffraction, Specific Surface Area (S BET ) and transmission electron microscopy, which revealed grain sizes around 5 nm. Gas sensors are fabricated by spin-coating deposition of Ni doped SnO 2 films over gold contacts. Electrical resistance of such devices is characterized, at room temperature, as function of SO 2 concentration into environment, showing sensitivity around 0.0058 ppm -1 for relative resistance variation, with good linearity for SO 2 concentrations up to 30 ppm.
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