We report on the observation of photogalvanic effects in tBLG with a twist angle of 0.6°. We show that excitation of the tBLG bulk causes a photocurrent, whose sign and magnitude are controlled by the orientation of the radiation electric field and the photon helicity. The observed photocurrent provides evidence for the reduction of the point group symmetry in low twist-angle tBLG to the lowest possible one. The developed theory shows that the current is formed by asymmetric scattering in gyrotropic tBLG. We also detected the photogalvanic current formed in the vicinity of the edges. For both bulk and edge photocurrents, we demonstrate the emergence of pronounced oscillations upon variation of the gate voltage. The gate voltages associated with the oscillations correlate with peaks in resistance measurements. These are well explained by interband transitions between a multitude of isolated bands in tBLG.

We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm 2 results in two orders of magnitude enhancement of the QPC conductance. The effect has a superlinear intensity dependence and increases with the dark conductivity decrease. It is also characterized by strong polarization and frequency dependencies. We demonstrate that all experimental findings can be well explained by the photon-mediated tunneling through the QPC. Corresponding calculations are in a good agreement with the experiment.

We report on the observation of symmetry breaking and the circular photogalvanic effect in Cdx Hg1-x Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation. arXiv:1911.01936v1 [cond-mat.mes-hall]

We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments. arXiv:1902.02972v2 [cond-mat.mes-hall]

We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show that the observed photoresponse nonlinearities are caused by the band-to-band light impact ionization under conditions of a photon energy less than the forbidden gap. The signature of this kind of impact ionization is that the angular radiation frequency ω = 2πf is much higher than the reciprocal momentum relaxation time. Thus, the impact ionization takes place solely because of collisions in the presence of a high-frequency electric field. The effect has been measured on narrow HgTe/CdTe QWs of 5.7 nm width; the nonlinearity is detected for linearly and circularly polarized THz radiation with different frequencies ranging from f = 0.6 to 1.07 THz and intensities up to hundreds of kW/cm 2 . We demonstrate that the probability of the impact ionization is proportional to the exponential function, exp(−E 2 0 /E 2 ), of the radiation electric field amplitude E and the characteristic field parameter E0. The effect is observable in a wide temperature range from 4.2 to 90 K, with the characteristic field increasing with rising temperature.

We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 × 10 5 cm 2 /V s. In a number of other structures with QW widths ranging from 5 to 20 nm and lower mobility we observed an unconventional non-oscillatory photoconductivity signal which changes its sign upon magnetic field increase. This effect was observed in structures characterized by both normal and inverted band ordering, as well as in QWs with critical thickness and linear dispersion. In samples having Hall bar and Corbino geometries an increase of the magnetic field resulted in a single and double change of the sign of the photoresponse, respectively. We show that within the bolometric mechanism of the photoresponse these unusual features imply a non-monotonic behavior of the transport scattering rate, which should decrease (increase) with temperature for magnetic fields below (above) the certain value. This behavior is found to be consistent with the results of dark transport measurements of magnetoresistivity at different sample temperatures. Our experiments demonstrate that photoconductivity is a very sensitive probe of the temperature variations of the transport characteristics, even those that are hardly detectable using standard transport measurements.PACS numbers:

Herein, studies of the cyclotron resonance (CR) in thick films with different cadmium contents corresponding to materials with and without band inversion, as well as critical content corresponding to an almost linear energy dispersion are presented. The results demonstrate that the formation of 2D topological surface states requires sharp interfaces between layers with and without band inversion, in which case the corresponding CR is clearly observed for the out‐of‐plane orientation of magnetic field but does not show up for an in‐plane orientation. In contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of with gradually changing Cd content x) show equally pronounced CR in both in‐plane and out‐of‐plane magnetic field revealing that CR is excited in effectively 3D states. Modeling of the surface states for different film designs supports main observations. In all samples, additional broad helicity‐independent resonances are observed, which are attributed to photoionization and magnetic freeze‐out of impurity states.

A highly superlinear in radiation intensity photoconductance induced by continuous wave terahertz laser radiation with low intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For very low values of the normalized dark conductance G dark /G 0 ≈ 10 −6 , with the conductance quantum G 0 = 2e 2 /h, the photoconductance scales exponentially with the radiation intensity, so that already at 100 mW/cm 2 , it increases by almost four orders of magnitude. This effect is observed for a radiation electric field oriented along the source drain direction. We provide model considerations of the effect and attribute it to the variation of the tunneling barrier height by the radiation field made possible by local diffraction effects. We also demonstrate that cyclotron resonance due to an external magnetic field manifests itself in the photoconductance, completely suppressing the photoresponse.