A novel crystallization procedure of Si films using a linearbeam excimer laser combined with a non-mass-separated ion doping method on a large-area is proposed for fabrication of poly-Si TFTs with maximum process temperature of 400°C. Fabricated TFTs show sufficiently high mobilities to drive peripheral circuitry and yet retains a low leakage current suitable to pixel transistors. TFTs' on-current deviation of well under & 20% has been obtained for both nand p-channel TFTs over an entire substrate. Long-term reliability of the TFTs has also been confirmed using a CMOS ring oscillator.
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