A theoretical investigation of factors limiting the detective quantum efficiency (DQE) of active matrix flat-panel imagers (AMFPIs), and of methods to overcome these limitations, is reported. At the higher exposure levels associated with radiography, the present generation of AMFPIs is capable of exhibiting DQE performance equivalent, or superior, to that of existing film-screen and computed radiography systems. However, at exposure levels commonly encountered in fluoroscopy, AMFPIs exhibit significantly reduced DQE and this problem is accentuated at higher spatial frequencies. The problem applies both to AMFPIs that rely on indirect detection as well as direct detection of the incident radiation. This reduced performance derives from the relatively large magnitude of the square of the total additive noise compared to the system gain for existing AMFPIs. In order to circumvent these restrictions, a variety of strategies to decrease additive noise and enhance system gain are proposed. Additive noise could be reduced through improved preamplifier, pixel and array design, including the incorporation of compensation lines to sample external line noise. System gain could be enhanced through the use of continuous photodiodes, pixel amplifiers, or higher gain x-ray converters such as lead iodide. The feasibility of these and other strategies is discussed and potential improvements to DQE performance are quantified through a theoretical investigation of a variety of hypothetical 200 microm pitch designs. At low exposures, such improvements could greatly increase the magnitude of the low spatial frequency component of the DQE, rendering it practically independent of exposure while simultaneously reducing the falloff in DQE at higher spatial frequencies. Furthermore, such noise reduction and gain enhancement could lead to the development of AMFPIs with high DQE performance which are capable of providing both high resolution radiographic images, at approximately 100 microm pixel resolution, as well as variable resolution fluoroscopic images at 30 fps.

We search for neutral heavy leptons that are isosinglets under the standard SU (2)l gauge group. Such neutral heavy leptons are expected in many extensions of the standard model. Three types of heavy leptons Ne, N^, NT associated with the three neutrino types v* have been directly searched for and no evidence for a signal has been found. We set the limit Br(Z° -► z//N*) < 3 x 10" 5 at the 95% CL for the mass range from 3 GeV up to m%.

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After years of aggressive development, active matrix flat-panel imagers (AMFPIs) have recently become commercially available for radiotherapy imaging. In this paper we report on a comprehensive evaluation of the signal and noise performance of a large-area prototype AMFPI specifically developed for this application. The imager is based on an array of 512 x 512 pixels incorporating amorphous silicon photodiodes and thin-film transistors offering a 26 x 26 cm2 active area at a pixel pitch of 508 microm. This indirect detection array was coupled to various x-ray converters consisting of a commercial phosphor screen (Lanex Fast B, Lanex Regular, or Lanex Fine) and a 1 mm thick copper plate. Performance of the imager in terms of measured sensitivity, modulation transfer function (MTF), noise power spectra (NPS), and detective quantum efficiency (DQE) is reported at beam energies of 6 and 15 MV and at doses of 1 and 2 monitor units (MU). In addition, calculations of system performance (NPS, DQE) based on cascaded-system formalism were reported and compared to empirical results. In these calculations, the Swank factor and spatial energy distributions of secondary electrons within the converter were modeled by means of EGS4 Monte Carlo simulations. Measured MTFs of the system show a weak dependence on screen type (i.e., thickness), which is partially due to the spreading of secondary radiation. Measured DQE was found to be independent of dose for the Fast B screen, implying that the imager is input-quantum-limited at 1 MU, even at an extended source-to-detector distance of 200 cm. The maximum DQE obtained is around 1%--a limit imposed by the low detection efficiency of the converter. For thinner phosphor screens, the DQE is lower due to their lower detection efficiencies. Finally, for the Fast B screen, good agreement between calculated and measured DQE was observed.

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The first examination of the use of active matrix flat-panel arrays for dosimetry in radiotherapy is reported. Such arrays are under widespread development for diagnostic and radiotherapy imaging. In the current study, an array consisting of 512 x 512 pixels with a pixel pitch of 508 microm giving an area of 26 x 26 cm2 has been used. Each pixel consists of a light sensitive amorphous silicon (a-Si:H) photodiode coupled to an a-Si:H thin-film transistor. Data was obtained from the array using a dedicated electronics system allowing real-time data acquisition. In order to examine the potential of such arrays as quality assurance devices for radiotherapy beams, field profile data at photon energies of 6 and 15 MV were obtained as a function of field size and thickness of overlying absorbing material (solid water). Two detection configurations using the array were considered: a configuration (similar to the imaging configuration) in which an overlying phosphor screen is used to convert incident radiation to visible light photons which are detected by the photodiodes; and a configuration without the screen where radiation is directly sensed by the photodiodes. Compared to relative dosimetry data obtained with an ion chamber, data taken using the former configuration exhibited significant differences whereas data obtained using the latter configuration was generally found to be in close agreement. Basic signal properties, which are pertinent to dosimetry, have been investigated through measurements of individual pixel response for fluoroscopic and radiographic array operation. For signal levels acquired within the first 25% of pixel charge capacity, the degree of linear response with dose was found to be better than 99%. The independence of signal on dose rate was demonstrated by means of stability of pixel response over the range of dose rates allowed by the radiation source (80-400 MU/min). Finally, excellent long-term stability in pixel response, extending over a 2 month period, was observed.

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A detailed theoretical and empirical investigation of additive noise for indirect detection, active matrix flat-panel imagers (AMFPIs) has been performed. Such imagers comprise a pixelated array, incorporating photodiodes and thin-film transistors (TFTs), and an associated electronic acquisition system. A theoretical model of additive noise, defined as the noise of an imaging system in the absence of radiation, has been developed. This model is based upon an equivalent-noise-circuit representation of an AMFPI. The model contains a number of uncorrelated noise components which have been designated as pixel noise, data line thermal noise, externally coupled noise, preamplifier noise and digitization noise. Pixel noise is further divided into the following components: TFT thermal noise, shot and 1/f noise associated with the TFT and photodiode leakage currents, and TFT transient noise. Measurements of various additive noise components were carried out on a prototype imaging system based on a 508 microm pitch, 26 x 26 cm2 array. Other measurements were performed in the absence of the array, involving discrete components connected to the preamplifier input. Overall, model predictions of total additive noise as well as of pixel, preamplifier, and data line thermal noise components were in agreement with results of their measured counterparts. For the imaging system examined, the model predicts that pixel noise is dominated by shot and 1/f noise components of the photodiode and TFT at frame times above approximately 1 s. As frame time decreases, pixel noise is increasingly dominated by TFT thermal noise. Under these conditions, the reasonable degree of agreement observed between measurements and model predictions provides strong evidence that the role of TFT thermal noise has been properly incorporated into the model. Finally, the role of the resistance and capacitance of array data lines in the model was investigated using discrete component circuits at the preamplifier input. Measurements of preamplifier noise and data line thermal noise components as a function of input capacitance and resistance were found to be in reasonable agreement with model predictions.