The deposition of uniform arrays of CdTe/CdS heterostructures suitable for solar cells via close-spaced sublimation is presented. The approach used to create the arrays consists of two basic steps: the deposition of a patterned growth mask on CdS, and the selective-area deposition of CdTe. CdTe grains grow selectively on the CdS but not on the SiO 2 due to the differential surface mobility between the two surfaces. Furthermore, the CdTe mesas mimic the size and shape of the window opening in the SiO 2 . Measurements of the current density in the CdTe were high at 28 mA/cm 2 . To our knowledge, this is the highest reported current density for these devices. This implies that either the quantum efficiency is very high or the electrons generated throughout the CdTe are being concentrated by the patterned structure analogous to solar concentration. The enhancement in crystal uniformity and the relatively unexplored current concentration phenomenon could lead to significant performance improvements.
Meas u re men ts ma de on de nt a l a malga m in tens io n indi ca te th at a ma lga m ex h ib its three t ypes of vi scoelasti c ph e nome na: (1) in st anta neo us e las ti c s tra in , (2) re ta rd ed e las ti c st ra in (tra nsie nt c ree p), a nd (3) visco us s train (s teady state c reep). T he co mbin a ti on of e lasti c plu s re ta rd e d s train ca n be rep re· se nt ed by a n eq uation of th e form f = A(T + 8 '(J' wh er e A a nd 8 a re fun c ti ons of time but not of the stress, (J . T he visco us s train ra te ca n be re p rese nted b y a n equ a ti on of th e for m €v = K(J'" wh ere K a nd m a re cons ta nts of th e ma te ri a l. By a pplyin g a nonlin ea r gene ra li zati o n of th e Bo lt zma nn s upe rposi ti on prin c ipl e to a ge ne ral eq ua ti on descri bin g the c ree p be hav ior of a ma lgam, the res ults of c reep tests ca n be d irectl y re la te d to th e resu lts of st ress-s train tes ts.Key Words: A ma lgam; c ree p; d e nt al; steady-state c reep; s tress-stra in ; tra ns ie nt c ree p; viscoe lasti c.
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