CdTe of well-defined composition has been deposited cathodically from an aqueous solution of CdSO4 and TeO2. Films with a rest potential of < --0.3V vs. SCE are n-type, those with a rest potential > --0.3V vs. SCE are p-type semiconductors. The rate of deposition increases with stirring rate; it is proportional to the TeO2 concentration but independent of the CdSO4 concentration. Films deposited at room temperature are amorphous, those deposited at higher temperatures are partly crystalline, the degree of crystallinity increasing with deposition temperature. Grain sizes are in the range 500-1000A. Annealing at 350~ causes the crystallite size to increase to ~0.5 #m.

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Aus wäßriger Lösung von CdSO4 und TeO, lassen sich CdTe‐Filme definierter Zusammensetzung kathodisch abscheiden.

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