ул. М. Гаджиева, 43аA technology has been developed for producing a high-temperature material (SiC)1x(AlN)x in the form of nanoscale films on a SiC silicon carbide substrate. Studies of the structure and composition of the obtained films have shown that higher-quality monocrystalline films are formed at temperatures close to 1000 K. Optimal technical parameters such as the working gas pressure, the height of the thermalization zone, spray currents, etc., for the formation of single crystals (SiC)1-x(AlN)x are determined on the SiC substrate.
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