In this letter, we investigated the behaviors of the absorptive–dispersive properties of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, Schrödinger and Poisson equations must be solved self consistently for carriers (here electrons) in quantum dots. The enhanced refractive index with amplification can be obtained via adjusting the corresponding controllable parameters such as intensity, detuning and relative phase of the applied fields. Our proposed scheme provides a realistic model for controlling the index of refraction in a quantum dot nanostructure.
In this paper, we investigated the behaviors of the absorptive-dispersive properties of weak probe light based on quantum coherence and interference in a Landau-quantized graphene nanostructure driven by coherent pumping fields. The linear dynamical properties of the grapheme are discussed with reference to the density matrix method and the perturbation theory. It is found that under certain conditions and by an appropriate selection of the parameters of the medium, the absorption, dispersion and group index of the weak probe light can be controlled. Moreover, the superluminal light propagation in the system is accompanied by amplification to make sure that the probe field is amplified as it passes through the system via adjusting the corresponding controllable parameters such as the intensity, the detuning and the relative phase of the applied fields. Moreover, it is observed that the probe amplification can be obtained in the presence or absence of population inversion by properly choosing the system’s parameters. We hope that these results may have useful application in future quantum communicational systems and networks.
In this paper, we investigated the transient electron population and the transient behaviour of the dispersion, absorption and refractive property of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, the Schrödinger and Poisson equations is solved selfconsistently for carriers (here electron) in quantum dot. Our findings show that the properties of transient processes can be dramatically affected by parameters such as intensity, detuning and relative phase of applied fields. Our proposed scheme provides a realistic model for transient control of refraction index properties in a quantum dot nanostructure. These results may have potential applications in high speed optical switch for quantum information technologies.
The Goos-Hänchen (GH) shifts due to a negative refractive index in double quantum-dot nanostructures are discussed in reflected and transmitted light beams. It is realized that positive and negative GH shifts can be attained in the negative-refraction medium due to the presence of the indirect incoherent pumping field and electron tunneling. We found that the lateral shift at the fixed incident angle can be enhanced (positive or negative) under suitable conditions on the control field, without changing the structure of the cavity. We hope that our proposed configuration may be helpful for future all-optical sensor devices based on quantumdot nanostructures.
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