In this paper a preparation method for high moment CoFe thin films with soft magnetic properties is reported. A full control of coercivity in a series of 20-nm-thick CoFe films has been achieved without using seed layers, additives, or thermal annealing. The films were sputtered directly onto Si substrates and the coercivity was varied by changing the mean grain size in the sputtered films. The mean grain size was in turn controlled via the sputtering rate. A reduction in the coercivity has been observed from 120Oe for samples with a mean grain size larger than 17nm down to 12Oe for a sample with a mean grain size of 7.2nm. The results are in good agreement with the “random anisotropy model” relating the coercivity to the mean grain size in polycrystalline ferromagnetic films.

Difficulties in controlling the grain size and size distribution in polycrystalline thin films are a major obstacle in achieving efficient performance of thin film devices. In this paper we describe a sputtering technology that allows the control of the grain size and size distribution in sputtered films without the use of seed layers, substrate heating or additives. This is demonstrated for three different materials (Cr, NiFe and FeMn) via transmission electron microscopy imaging and grain size analysis performed using the cumulative percentage method. The mean grain size was controlled only via the sputtering rate. We show that higher sputtering rates promote the growth of larger grains. Similar trends were obtained in the standard deviation, which showed a clear reduction with the sputtering rate.

No abstract

Amorphous hafnium oxide ͑HfO x ͒ is deposited by sputtering while achieving a very high k ϳ 30. Structural characterization suggests that the high k is a consequence of a previously unreported cubiclike short range order in the amorphous HfO x ͑cubic k ϳ 30͒. The films also possess a high electrical resistivity of 10 14 ⍀ cm, a breakdown strength of 3 MV cm −1 , and an optical gap of 6.0 eV. Deposition at room temperature and a high deposition rate ͑ϳ25 nm min −1 ͒ makes these high-k amorphous HfO x films highly advantageous for plastic electronics and high throughput manufacturing.

A novel rf sputtering technology in which a high density plasma is created in a remote chamber has been used to reactively deposit zinc oxide (ZnO) and indium zinc oxide (IZO) thin films at room temperature from metallic sputtering targets at deposition rates ∼50 nm min −1 , which is approximately an order of magnitude greater than that of rf magnetron sputtering. Thin film transistors have been fabricated using IZO with a maximum processing temperature of 120 • C, which is defined by the curing of the photoresist used in patterning. Devices have a saturated field effect mobility of 10 cm 2 V −1 s −1 and a switching ratio in excess of 10 6 . Gate bias stress experiments performed at elevated temperatures show a consistent apparent increase in the field effect mobility with time, which is attributed to a charge trapping phenomenon.