The thermal stability of sputter deposited LaAlOx and lanthanum aluminum oxynitride (LaAlON) dielectrics on top of Si (100) was evaluated after 1000°C rapid thermal annealing (RTA). A nitrogen concentration of ∼3at.% in the bulk LaAlON film was found to suppress crystallization as well as metal (lanthanum and aluminum) outdiffusion into the Si (100) substrate after the RTA treatment. These results suggest that film microstructure should be carefully controlled to inhibit impurity diffusion in the conventional gate stack fabrication process.
Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials Thermal stability of the HfO 2 ∕ SiO 2 interface for sub-0.1 μ m complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy J. Appl. Phys. 96, 6362 (2004); 10.1063/1.1809769Characterization of atomic-layer-deposited silicon nitride / SiO 2 stacked gate dielectrics for highly reliable pmetal-oxide-semiconductor field-effect transistors Abstract. The thermal stability of high-k gate dielectrics and metal gate stack materials under consideration for ULSI technology must be examined for their integration into the MOSFET process flow. In this study, we evaluate the thermal stability of amorphous lanthanum aluminate (LaAlO 3 ) thin films and metal gate -Hf based gate dielectric stacks on Si (100). XPS, XRD, AFM, TEM, wet etching and backside SIMS are utilized to evaluate the stack stability upon rigorous rapid thermal anneals (RTA) in flowing N 2 ambient. Al 2 O 3 capped LaAlO 3 thin films show a crystallization dependence on the out-diffusion of La and Al into the underlying Si substrate. Penetration of La and Al are seen above 950 o C RTA for 20 s. Evaluation of uncapped and W capped Ru on Hf-based high-k gate stacks indicate, Ru inter-diffusion below the detection limits of SIMS and substantial W diffusion throughout the gate stack upon a 1000 o C, 10 s RTA in N 2 .
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