No abstract

We have investigated the electronic characteristics in the Ga and N adsorption processes of crystal growth in gallium nitride (GaN) by first-principle density functional calculation. Potential energy curves along the Ga and N adsorption processes for the surface orientations (0001), ð000 1 1Þ, ð1 1 100Þ, and ð11 2 20Þ were obtained. We have observed the obvious superiority of (0001) orientation in growth rate. We have discussed the local electronic processes in the crystal growth of GaN in terms of the variety of energy densities introduced by the regional density functional theory.

We have investigated the electronic characteristics in the Ga and N adsorption processes of crystal growth in gallium nitride (GaN) by first-principle density functional calculation. Potential energy curves along the Ga and N adsorption processes for the surface orientations (0001), ð000 1 1Þ, ð1 1 100Þ, and ð11 2 20Þ were obtained. We have observed the obvious superiority of (0001) orientation in growth rate. We have discussed the local electronic processes in the crystal growth of GaN in terms of the variety of energy densities introduced by the regional density functional theory.