Ybdoped materials. whith typically lase around 1,03 pm, have the simple electronic stNctwe of Yband have attraded cnnsiderable attention over the past few years. Only a several Ybdoped aystals have been extensively studied as laser media to date: %YAG 111, Yb-FAP,YbS-FAP lu and Yb-GSGG 131.In this paper we repotl for the first time about m m temperature single-mode CW operation of Yb-EdSGa~Ot2 ( YCGGG) laser at Ti-sapphire laser pump in the range of 0.944.97 pm.
Although a number of Nd-doped crystals has been grown and studied, Nd3+ -doped lasers have received considerable attention up to now. Laser crystals of Nd3+:Ca3Ga2Ge3O12 -garnet (Nd-CGGG) with Nd3+ concentration of 0.8 at.% were grown and stimulated emission was observed in 1978/1/. But the efficiency of Nd-CGGG crystals for the mordem applications is still not complitly clear.
Yb-doped materials, whith typically lase around 1.03 μm, have the simple electronic structure of Yb3+ and have attracted considerable attention over the past few years. Only a several Yb-doped crystals have been extensively studied as laser media to date: Yb-YAG/1/, Yb-FAP,Yb-S-FAP /2/ and Yb-GSGG /3/.
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