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CuInSe2thin films were prepared under vacuum by conventional evaporation method .The films were deposited at different film thickness (188-577nm) .XRD of as-prepared powder indicated that CuInSe2has tetragonal poly crystalline structure with(122) preferred orientation, while XRD of the as-deposited films were of a mixed amorphous- microcrystalline nature. The variation of the calculated lattice parameters at different film thickness were showed. The electrical properties of CuInSe2thin films were studied at different film thickness. The dark conductivity of the films was measured as a function of temperature. Two regions were obtained corresponding to two activation energy. The activation energy decreases with increasing the film thickness.