Palladium is a preeminent material for the preparation of sensors for hydrogen and hydrogen‐evolving compounds. Conducting polyaniline can be chemically or electrochemically functionalized by the incorporation of palladium clusters. Different interfaces in a three‐dimensional matrix for hydrogen adsorption, desorption, and evolution were synthesized and characterized. Dispersions of palladium clusters in the polymer film were formed by various preparation routes, which can be classified as one‐ or two‐step processes. In the one‐step process, the composite material was obtained during the electrosynthesis of polyaniline film. In the two‐step processes, Pd aggregated into the polyaniline modified electrode. Electrochemical examination, x‐ray photoelectron spectroscopy, and Auger electron spectroscopy have been employed to characterize the composite materials in view of the hydrogen sorption and evolution as well as the binding energy state and the spatial distribution of the palladium clusters in polyaniline film.

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This paper examines the damage created by an electron beam on layered specimens consisting of a (CH2)17 self-assembled monolayer (SAM) deposited on an oxidized Si wafer. Beam effects on both the SAM and substrate were observed. X-ray photoelectron spectroscopy (XPS) measurements indicate that less than 20% of the carbon from the film is lost during the beam damage, ion analysis shows hydrogen emission from the films, and residual gas analysis suggest loss of some CHx (x=2–4) molecules. Consistent with the conversion of some (CH)n chains to ‘‘graphite,’’ the C 1s photopeak is broadened by the electron beam. In addition to the effects on the SAM layer, there are shifts for the O 1s and oxidized-Si2p binding energies due to the electron beam exposure. Studies on SiO2 films formed in a wide variety of ways, without the SAM, show similar effects. These shifts are attributed to changes in potential at the Si–SiO2 interface.

IOX. ~ IRED. , ! -Z.t,0 i 9 I .-,* --.~v'~r~ l 0t~" I -ua/~ -0.gst ----V (SCE Fig. 10. Schematic representation of the electrochemical processes occurring during etching in alkaline solutions: anodic dissolution of AI and cathodic reduction of H20 and In203. The vertical dashed line on the left indicates the corrosion potential of a separate AI sQmple, while the right one refers to the corrosion potential of an ITO/AI specimen.Rexwinkel for the micrographs, and C. J. Geenen for the scanning electron micrographs and the EDAX measurements. ABSTRACTIntergranular stress corrosion cracking (IGSCC) of metallic alloys including iron is strongly influenced by the presence of grain boundary impurities such as phosphorus. In this study to determine how phosphorus affects the corrosion of iron, electrochemical polarization methods were used in conjunction with surface analyses employing ultrahigh vacuum transfer. Specifically, these methods were used to examine the corrosion of iron, iron/phosphorus alloys, and iron implanted with phosphorus in deaerated 55 weight percent Ca(NO3)2 solutions at 60~ The presence of phosphorus in iron accelerated corrosion in both the active and passive regions, with the effect being more pronounced in the passive region. In the active region, the phosphorus was oxidized to phosphate which, in turn, appeared to assist the dissolution of the semiprotective Fe304. In the passive region, the phosphorus (when unoxidized) accelerated corrosion by some other mechanism. The FePO4 that formed in the passive region did not inhibit passivation but, rather, was incorporated in the passive film. The chemical transformations would appear to explain, at least partly, the high IGSCC rates observed for iron containing phosphorus segregated at grain boundaries. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-23 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-23 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-23 to IP

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