A method of determining the thermal diffusivity χ M of a thin film of a transparent dielectric in the direction normal to the surface has been developed. It is based on excitation of reflecting dynamic gratings. The effectiveness of the method is checked experimentally with the example of a thermally oxidized submicron SiO 2 film on a silicon substrate. The temperature dependence of χ M in the range 290-420 K is measured. The possibilities of setting up thermal measurements of films tens of nanometers thick and its problems are discussed.
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