Abshact-YB~Cu30x (YBCO) films have been deposited on buffered metal substrates by metal organic chemical-vapor deposition (MOCVD). Nickel alloy substrates with biaxirdlytextured yttria-stabilized zirconia (YSZ) buffer layers deposited by ion-beam-assisted deposition (IBAD) were used. A liquidstatic precursor delivery system was designed, constructed, and used in the MOCVD facility at Intermagnetics for the reported work. At 77 & under self-field conditions, we achieved a critical current (Q of 97.5 A in YBCO film grown by MOCVD on an IBAD substrate. This ICcorresponds to a critical current density of 1.3 MA/cm2 and 130 A/cm width of tape.
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