It is well known that magnetic films deposited on evaporated copper on a glass substrate have wall coercive forces Hc much larger than those directly deposited on glass. This is due in part to the surface roughness of the large copper crystallites. This work demonstrates that there is a significant additional contribution to Hc due to stress in a material in which λ100≠λ111 even though λs=0. Electron-microscopy crystallite-size measurements suggest this stress arises from epitaxial growth. This stress can be relieved by stripping the films from the glass and selectively etching away the copper. For example, a 600-Å nonmagnetostrictive film evaporated from a 50 Co 47 Ni 3 Fe melt on a freshly evaporated 1-μ evaporated copper film on a 200°C glass substrate had a Hc of 72 Oe. After this film was stripped and the copper was etched away, Hc was reduced to 35 Oe. For a companion film deposited directly on glass Hc = 13 Oe. Several materials evaporated as thin (∼100 Å) intermediate layers which successfully inhibit epitaxial growth and stress include Cr, Mn, Ti, and Pt.
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