In the quest to establish communication as a critical management function both literature and research have stressed the importance of effective communication as a prerequisite to the success of various programmes including service quality. Effective internal communication, leadership and employee issues (such as team building and incentivisation) seem to be three generic aspects of critical importance in the potential success of any organisation. This article will attempt to provide academic insight into the link between service quality initiatives and these three aspects and will attempt to underline the importance thereof with current research results.
The main problems in service quality programmes seem to stem from methods and strategies used rather than actual service quality improvement itself. The present study is based on a questionnaire survey of organisations that had in fact implemented a service quality strategy. Several organisations studied here, indicated that the implementation of these programmes without measuring results, ended up wasting resources on non-value adding uses. This can be partly attributed to the complexity of available software. Another problem arises because organisations fail to understand the dynamics of change. Service quality was thus seen as a quick fix, treating symptoms instead of underlying problems. This study concludes that organisations should implement such strategies not only with commitment but correct and with relevant information and knowledge.
Si+ bombardment of Sbln-Si Schottky contacts significantly affects the values of some Schottky parameters even at low dose densities. The parameters considered are the ideality constant n, the saturation current density Z, and the series resistance R. Before implantation these parameters exhibited large variations due to interface conditions. After implantation more uniform Z-Y characteristics were observed. Implantation led to higher values for the ideality comtant and the series resistance and lower values for the saturation current. The ideality factor showed a decrease with increasing implantation dose. The saturation current and series resistance did not show any dose dependence. The compositional/structural properties of the contacts after ion bombardment are altered at high dose densities. For dose densities + 3 5 x lo'' Si' cm-*, a-particle channelling showed the silicon substrate to be partly amorphized. This amorphization increased with increasing dose densities. AES and R E measurements found no evidence of silicide formation. Only slight mixing was observed. Other experimental and theoretical studies either confirm our measurements or confirm the trend of our measurements.
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