Athermal and tunable operations of 850nm vertical cavity surface emitting lasers with thermally actuated T-shape membrane structure Appl. Phys. Lett. 101, 121115 (2012) High-power tunable two-wavelength generation in a two chip co-linear T-cavity vertical external-cavity surfaceemitting laser Appl. Phys. Lett. 101, 121110 (2012) Broad wavelength tunability from external cavity quantum-dot mode-locked laser Appl. Phys. Lett. 101, 121107 (2012) A portable optical emission spectroscopy-cavity ringdown spectroscopy dual-mode plasma spectrometer for measurements of environmentally important trace heavy metals: Initial test with elemental Hg Rev. Sci. Instrum. 83, 095109 (2012) Longitudinal computer-generated holograms for digital frequency control in electronically tunable terahertz lasers
Two terahertz quantum cascade lasers based on GaAs∕Al0.1Ga0.9As heterostructures are reported. Pulsed mode operation up to 84K and continuous wave (cw) power of 0.36mW at 10K are demonstrated for the laser which emits from 1.34to1.58THz. The other laser shows emission from 1.2to1.32THz with pulsed mode operation up to 69K and cw power of 0.12mW at 10K.
In this paper we review recent progress in obtaining laser action from semiconductor quantum cascade structures covering the low THz region of the electromagnetic spectrum, from 2 THz (λ 155 μm) down to the sub-THz region (λ > 300 μm). Particularly, laser active region designs based on bound-to-continuum transition and magnetically assisted intra-well transition are presented. The wide scalability of active region designs is discussed and illustrated with experimental data. Latest results including the demonstration of laser action from quantum heterostructure at 950 GHz are presented.THz quantum cascade lasers are based on semiconductor heterostructures and cover a wide spectral window which now extends below 1 THz.
Abstract-This paper gives an overview on the design, fabrication, and characterization of quantum cascade detectors. They are tailorable infrared photodetectors based on intersubband transitions in semiconductor quantum wells that do not require an external bias voltage due to their asymmetric conduction band profile. They thus profit from favorable noise behavior, reduced thermal load, and simpler readout circuits. This was demonstrated at wavelengths from the near infrared at 2 m to THz radiation at 87 m using different semiconductor material systems. In the NIR, fast intraband semiconductor photodetectors are only available for wavelengths up to about 1.6 m. On the other tail of optical frequencies, namely for detection of THz radiation, bolometers are widely used; however, they are not well suited for high-speed applications. For fast light detection at wavelengths above 1.6 m, ISB photodetectors are very promising candidates. As unipolar devices, their fundamental F. R. Giorgetta was with the University of Neuchatel, 2000 Neuchatel, Switzerland. He is now with the National
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