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Phosphorus anti-site centres, PP4, and indium vacancy defects, V,,, have been investigated in electron-irradiated InP by optical detection of magnetic resonance in both absorption and emission processes. Microwave-induced changes of the magnetic circular dichroism signal near 1.2 eV are used to investigate t h e anti-sites and vacancies in both InP:Zn and InP:Sn as a function of electron fluence and t h e measurements take advantage of the increased sensitivity of t h e optical method over conventional EPR. These ground-state studies are complemented by ODMR investigations where recombination processes involving the anti-site and vacancy centres give rise to luminescence near 0.8 eV. The absorption and emission ODMR results provide information on the optical depths of the defect centres and indicate that the anti-site is an intrinsic defect in as-grown InP with a concentration less than 5 X 1015 cm-3.

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