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InP/In 0 53 Ga 0 47 As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency max and a 207 GHz current-gain cutoff frequency were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BV was 5.5 V, while the dc current gain was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance.Index Terms-Heterojunction bipolar transistor, indium phosphide, metamorphic growth, molecular beam epitaxy.

We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz and 400 GHz max . The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8 10 19 /cm 3 to 5 10 19 /cm 3 , an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 ) and contact ( 10 -m 2 ) resistivities are in part responsible for the high max observed.

We report common-base medium power amplifiers designed for-band (140-220 GHz) and-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high-frequency maximum stable gain (MSG). Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces ce and, hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7-dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1-dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1-dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6-dBm output power with an associated power gain of 4.5 dB at 148 GHz. In the-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz. Index Terms-InP heterojunction bipolar transistor, millimeterwave amplifier, monolithic microwave integrated circuit (MMIC) amplifiers. I. INTRODUCTION W-BAND (75-110 GHz) and-band (140-220 GHz) amplifiers have applications in wide-band communication systems, atmospheric sensing, and automotive radar. The high mobility of InGaAs, high electron saturation velocity of InP, and submicrometer scaling result in wide-bandwidth transistors with high available gain in this frequency band. In a transferred substrate InP HBT process, 6.3-dB gain is reported at 175 GHz with a single-stage amplifier [1]. State-of-the-art results in InP high electron-mobility transistor (HEMT) technologies include a three-stage amplifier with 30-dB gain at 140 GHz [2], a three-stage amplifier with 12-15-dB gain from 160 to 190 GHz [3], and a three-stage power amplifier with 10-dB gain from 144 to 170 GHz [4].

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InP-In 0 53 Ga 0 47 As-InP double heterojunction bipolar transistors (DHBTs) were grown on a GaAs substrate using a metamorphic buffer layer and then fabricated. The metamorphic buffer layer is InP-employed because of its high thermal conductivity to minimize device heating. An and max of 268 and 339 GHz were measured, respectively-both records for metamorphic DHBTs. A 70-nm SiO 2 dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch for increased device yield and reduced base leakage current. The dc current gain is 35 and BR CEO = 5 7 V. The collector leakage current cbo is 90 pA at cb = 0 3 V. These values of , max , cbo , and are consistent with InP based DHBTs of the same layer structure grown on a lattice-matched InP substrate. Index Terms-Heterojunction bipolar transistor (HBT), lattice matched, metamorphic growth.

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