This note demonstrates how the principle of conservation of energy can be used to derive in a simple and correct way the Shockley-Ramo equation for currents induced by charged particles in electronic devices. The simplest form of this equation occurs for a charge q which moves with speed v between two plane-parallel electrodes separated by a distance d. For this case the induced current I is given by I = qv/d. A one-dimensional example, for which the calculations are quite simple, is considered in detail by the energy method.
Recent studies of electrical oscillations in silicon compensated with deep lying impurity levels are described. Factors affecting these oscillations such as sample resistivities and geometrical configurations, field strengths, current densities, and illumination are discussed. It is found that there are two possible oscillation mechanisms.
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