Figure 1. Schematic of cross-point memory structure based on (a) simple switch and (b) with the addition of PN diodes in series 2.2 Programming of diode based OTP memoryThe schematic of a back-to-back diode OTP memory is given in Fig. 2 and the corresponding voltages used in program and disable are summarized in table 1. During programming, the program wordline of the selected row of the memory array is pulled up to a high voltage, while those unselected rows are either grounded or left at a high impedance state. The reverse-bias diode in cell D will be broken down to become a resistor [5]-[6]. on
A CMOS-compatible high voltage multiplexer (HV MUX) for zero-additional-mask CMOS one time programmable (OTP) memory array mask is presented. The HV MUX uses standard CMOS with low input voltage and produce high output voltage beyond the V DD allowed by the process for programming the OTP memory array. By limiting the instantaneous voltage between any two nodes, the HV MUX can tolerate the high voltages for programming without sacrificing reliability. Two configurations of CMOS OTP memory array using the HV MUX are presented and simulated to confirm the functionality of the design.
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