This paper presents an 8-elements phased array receiver front-end in 45nm CMOS technology. The receiver uses a 4-bit resolution RF phase shifter to compensate for the free-space propagation delay and an active eight-to-one power combiner enabling beam-forming. Each path shows more than 15.8dB of power gain with <0.5 dB of RMS gain variation for all 16 phase settings over the 3-dB gain bandwidth from 53.2GHz -64.6GHz. The measured RMS phase error is <5 o over the same band, achieving greater than 4-bit accuracy. Within the 3-dB gain bandwidth, the single-path NF ranges from 4.3dB to 6.3dB. The total power consumption is 613mW and the overall chip size is 4.8x1.5mm 2 Index Terms -Beam forming, millimeter wave, phased array receiver, phase shifter.
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