A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed. Then, a compact analytical expression for the subthreshold swing as a function of temperature is derived, well accounting for both its cryogenic temperature saturation and classical higher temperature increase. Moreover, a generalized subthreshold swing calculation applicable to the situation where the MOSFET drain current should be evaluated from the conductivity function within the Kubo-Greenwood formalism is developed.
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